smb plastic-encapsulate diodes features 1 h igh diode semiconductor smb thyristor surge suppressors low switching voltage low on-state voltage does not degrade surge capability after multiple surge events within limit fails short circuit when sur ged in excess of ratings low capacitance protect circuit applications parameter definition co off-state capacitance?typical capacitance measured in off state di /dt rate of rise of current ?maximum rated value of the acceptable rate of rise in current over time is switching current?maximum current required to switch to on state idrm leakage current ?maximum peak off-state current measured at vdrm ih holding current ?minimum current required to maintain on state ipp peak pulse current?maximum rated peak impulse current it on-state current?maximum rated continuous on-state current itsm peak one-cycle surge current ?maximum rated one-cycle ac current vs switching voltage ?maximum voltage prior to switching to on state vdrm peak off-state voltage ?maximum voltage that can be applied while maintaining off state vf on-state forward voltage ?maximum forward voltage measured at rated on-state current vt on-state voltage ?maximum voltage measured at rated on-state current electrical characteristics (t =25 unless otherwise specified a p0080sc thru p4200sc
2 h igh diode semiconductor electrical characteristics surge ratings electrical characteristics (t =25 unless otherwise specified a limiting values (absolute maximum rating) p0080sc 6 5 25 800 4 2.2 50 80 part number v drm v min. i drm ua max. v s v max. i s ma i t a v t v max. i h ma c o pf max. 1 vs is measured at 100kv/s 2 off-state capacitance is measured in v =2v,v =1v,f=1mhz dc rms 3 all measurements are made at an ambient temperature of 25 p0300sc 25 5 40 800 4 2.2 50 80 p0640sc 58 5 77 800 4 2.2 150 80 p1800sc 170 5 220 800 4 2.2 150 80 p2300sc 190 5 260 800 4 2.2 150 80 p2600sc 220 5 300 800 4 2.2 150 80 p3100sc 275 5 350 800 4 2.2 150 40 p3500sc 320 5 400 800 4 2.2 150 40 p4200sc 390 5 500 800 4 2.2 50 70 series p0080sc thru p4200sc ipp 2x10us (a) 500 ipp 8x20us (a) 400 vpp 10x700us (v) 6000 ipp 10x560us (a) 150 ipp 10x1000us (a) 100 i tsm 60hz (a) 30 d/d it (a/us) 500 symbol t j parameter operang juncon temperature value - 40 to +150 unit t s storage temperature range - 40 to +150 r ja juncon to ambient on printed circuit 90 / w
t ypical characteristics 3 h igh diode semiconductor + v + i -i i s i h i drm v t v s - v i t v drm v-i characteristics 50 100 0 t r t d 0 peak value half value t r = rise me to peak value t d = decay me to half value wave fo rm = t r x t d ippC peak pulse current C %ipp tCtime (s) tr x td pulse waveform - 8 -- 40 20 0 20 40 60 80 100 120 140 16 0 - 6 - 4 0 2 4 6 8 10 12 14 percent of v change C % s juncon temperature (tj) C c 25 c 2.0 1. 8 1. 6 1. 4 1. 2 1. 0 0.8 0.6 0.4 - -20 40 0 20 40 60 80 1 00 120 1 40 160 25 c case temperature (t ) - c c rao of i h i (tc=25 c) h normalized v change vs. junction temperature normalized dc holding current vs. case temperature
4 jshd jshd h igh diode semiconductor dimensions in inches and (millimeters) 0.087 (2.20) 0.071 (1.80) 0.180(4.57) 0.160(4.06) 0.155(3.94) 0.130(3.30) 0.060(1.52) 0.030(0.76) 0.220(5.59) 0.205(5.21) 0.012(0.305) 0.006(0.152) 0.008(0.203)max. 0.096(2.44) 0.084(2.13) 4.26 1.8 smb smb
5 reel taping specifications for surface mount devices-smb h igh diode semiconductor
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